, o ne. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJE13007 silicon npn switching transistor . sgs-thomson preferred salestype . npn transistor . high current capability applications . switching regulators . motor control description the MJE13007 is a silicon multiepitaxial mesa npn power transistor mounted in jedec to-220 plastic package. it is are inteded for use in motor control, switching regulators etc. to-220 internal schematic diagram co (2) absolute maximum ratings symbol vcev vceo vebo ic icm ib ibm ie iem plot tstg tj. parameter collector-emitter voltage (vbe = -1.5v) collector-emitter voltage (ib = 0) emitter-base voltage (ic = 0) collector current collector peak current base current base peak current emitter current emitter peak current total dissipation at tc < 25 c storage temperature max. operating junction temperature value 700 400 9 8 16 4 8 12 24 80 -65 to 150 150 unit v v v a a a a a a w c ' c " nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj .semi-conductors encourages customers to verify that datasheets are current before placing orders. ounlitv
MJE13007 thermal data r|hj-ca se thermal resistance junction-case max 1,56 c/w electrical characteristics (tcase = 25 c unless otherwise specified) symbol parameter test conditions icev collector cut-off vce = rated vcfv current (vbe = -1.5v) vce = rated vcev tc = 100c iebo emitter cut-off current veb = 9 v (ic = 0) vceo(sus)* collector-emitter ic - 10 ma sustaining voltage vcejsatr collector-emitter ic = 2 a ib = 0.4 a saturation voltage ic = 5 a ib = 1 a |c = 8 a ib = 2 a lc = 5 a ib = 1 a tc = 100 "c vbeisatr base-emitter ic = 2 a ib = 0.4 a saturation voltage ic = 5 a ib = 1 a ic = 5 a ib = 1 a tc = 100 c hfe* dc current gain lc = 2 a vce = 5 v ic = 5 a vce = 5 v ft transition frequency lc = 0.5 a vce = 10 v f = 1 mhz ccbo output capacitance ie = 0 vcb = 10 v f = 0.1 mhz min. 400 8 6 4 typ. 110 max. 1 5 1 1 1.5 3 2 1.2 1.6 1.5 40 30 unit ma ma ma v v v v v v v v mhz pf resistive load symbol ton ts tf parameter turn-on time storage time fall time test conditions vcc = 125 v lc = 5 a ibi - -lb2 - 1 a tp ~ 25 us duty cycle < 1% min. typ. max. 0.7 3 0.7 unit .us ms ms inductive load symbol t( tf parameter fall time fall time test conditions vcc = 125 v lc = 5 a ibi = 1 a tp = 25 us duty cycle < 1% vcc = 125 v lc = 5 a ibi = 1 a tp = 25 jjs duty cycle < 1% tc= 100 c min. typ. max. 0.3 0.6 unit ms us ' pulsed: pulse duration = 300 us, duty cycle 2 %
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